Umgaqo wokuvelisa umbane kwiiphaneli zelanga

Ilanga likhanya kwi-semiconductor PN junction, lenza isibini esitsha se-hole-electron. Phantsi kwesenzo sombane we-PN junction, umngxuma uphuma kummandla we-Pn ukuya kummandla we-N, kwaye i-electron iphuma kummandla we-N ukuya kummandla we-P. Xa isekethe iqhagamshelwe, umbane uyenziwa. Yindlela esebenza ngayo iiseli zelanga ze-photoelectric effect.

Ukuveliswa kwamandla elanga Kukho iintlobo ezimbini zokuveliswa kwamandla elanga, enye yindlela yokuguqula ukukhanya-ubushushu-umbane, enye yindlela yokuguqula ukukhanya-umbane ngokuthe ngqo.

(1) Indlela yokuguqula ukukhanya-ubushushu-umbane isebenzisa amandla obushushu aveliswa yimitha yelanga ukuvelisa umbane. Ngokubanzi, amandla obushushu afunxwayo aguqulwa abe ngumphunga wesixhobo esisebenzayo ngumqokeleli welanga, aze emva koko i-turbine yomphunga iqhutywe ukuvelisa umbane. Inkqubo yokuqala yinkqubo yokuguqula ukukhanya-ubushushu; Inkqubo yokugqibela yinkqubo yokuguqula ubushushu-umbane.

(2) Isiphumo se-photoelectric sisetyenziselwa ukuguqula amandla emitha yelanga ngqo abe ngamandla ombane. Isixhobo esisisiseko sokuguqulwa kwe-photoelectric yiseli yelanga. Iseli yelanga sisixhobo esiguqula ngokuthe ngqo amandla okukhanya kwelanga abe ngamandla ombane ngenxa yesiphumo se-volt generation photogeneration. Yi-semiconductor photodiode. Xa ilanga likhanya kwi-photodiode, i-photodiode iya kuguqula amandla okukhanya kwelanga abe ngamandla ombane kwaye ivelise umbane. Xa iiseli ezininzi ziqhagamshelwe ngokulandelelana okanye ngaxeshanye, uluhlu lwesikwere lweeseli zelanga ezinamandla amakhulu okukhupha lunokwenziwa.

Okwangoku, i-crystalline silicon (kuquka i-polysilicon kunye ne-monocrystalline silicon) zezona zinto zibalulekileyo ze-photovoltaic, isabelo sayo semarike singaphezulu kwe-90%, kwaye kwixesha elizayo ixesha elide iya kuba zizinto eziphambili zeeseli zelanga.

Kangangexesha elide, ubuchwepheshe bemveliso yezinto ze-polysilicon bulawulwa ziifektri ezili-10 zeenkampani ezisi-7 kumazwe ama-3, njenge-United States, iJapan neJamani, ezenza ukuvalwa kwetekhnoloji kunye nokulawula imarike.

Imfuno yePolysilicon ikakhulu ivela kwii-semiconductors kunye neeseli zelanga. Ngokweemfuno ezahlukeneyo zococeko, zahlulwe zibe yinqanaba le-elektroniki kunye nenqanaba lelanga. Phakathi kwazo, i-polysilicon yenqanaba le-elektroniki imalunga ne-55%, i-polysilicon yenqanaba lelanga ingama-45%.

Ngophuhliso olukhawulezayo lweshishini le-PHOTOVOLTAIC, imfuno ye-polysilicon kwiiseli zelanga ikhula ngokukhawuleza kunophuhliso lwe-semiconductor polysilicon, kwaye kulindeleke ukuba imfuno ye-solar polysilicon idlule kweye-electronic-grade polysilicon ngo-2008.

Ngo-1994, imveliso iyonke yeeseli zelanga ehlabathini yayiyi-69MW kuphela, kodwa ngo-2004 yayisondele kwi-1200MW, ukwanda okuphindwe ka-17 kwiminyaka eli-10 kuphela. Iingcali ziqikelela ukuba ishishini le-photovoltaic yelanga liya kudlula amandla enyukliya njengenye yezona mithombo zamandla zibalulekileyo kwisiqingatha sokuqala senkulungwane yama-21.